产品中心

\new center

联系我们

地　　址：东莞市塘厦镇168工业区
联系人：温先生
手　　机：0769-82953511
主　　营：提供各类主动元件、被动元件及机电元件等电子零组件、设计开发服务

Fairchild is a leader in MOSFET technology for both power delivery and power conversion applications. We offer a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) and multiple range of innovative packaging options as well as strong technical support. More OEMs choose Fairchild because we continue to provide leading edge MOSFET technologies for AC-DC and DC-DC designs.
Our advanced silicon technology provides smaller die sizes, which we incorporate into multiple industry-standard and thermally-enhanced packages. This capability yields industry-leading power densities (amps delivered per cm² board space) and superior thermal performance.
Our Featured MOSFETs Technologies Include:

Planar: UniFET™ MOSFETs
Super Junction: SuperFET® II MOSFETs
Trench: PowerTrench® MOSFETs

View Discrete MOSFET Products by Voltages

N-Channel <= 250V Family	N-Channel > 250V Family	NP-Channel MOSFETs <=250
P-Channel <= 250V Family	P-Channel > 250V Family

Why Choose Our MOSFET Products

Power delivery solutions are part of Fairchild's core business, and we have continuously delivered leading power semiconductors for more than 50 years.
Combined MOSFET and gate driver IP to create application-optimized solutions that minimize both conversion and conduction losses associated with the overall system.
Ability to mix and match MOSFETs, controller and PWM driver IP with advanced processing and packaging capabilities to provide optimized component choices.
Our MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

应用指南

应用指南	功能/产品	说明
AN-9015	MOSFET, FET, 负电压线性调节器, 正电压线性调节器, 整流器, 肖特基二极管和整流器, 并联调节器, 小信号二极管, 1N4148, 1N4148WS, 1N4148WT,	A180W, 100KHz Forward Converter Using QFET®
AN-9008	FET, 正电压线性调节器, 整流器, 小信号二极管, 1N4148, 1N4148WS, 1N4148WT, 1N4937,	The Use of QFET® in Flyback Converter
AN-9013	MOSFET, FET, 小信号二极管, 小信号 BJT, 1N4148, 1N4148WS, 1N4148WT, FQP10N20C,	Reducing Switching Losses with QFET® in a Step-up Converter
AN-7510	MOSFET, FET, 2N7000, 2N7000BU, 2N7000TA, 2N7002,	A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options
AN-9065	MOSFET, FET, TV & Monitor, 2N7000, 2N7000BU, 2N7000TA, 2N7002,	AN-9065 同步整流中的 FRFET®
AN-558	MOSFET, FET, 2N7000, 2N7000BU, 2N7000TA, 2N7002,	Introduction to Power MOSFETs and their Applications
AN-9034	车用N沟道MOSFET, 车用P沟道MOSFET, MOSFET, FET, 功率管理, Central Inverter System, Micro Converter System, Micro Inverter System, Welding Machine, 2N7000,	AN-9034 功率 MOSFET 雪崩应用指南
AN-9010	车用N沟道MOSFET, 车用P沟道MOSFET, MOSFET, FET, 功率管理, 2N7000, 2N7000BU, 2N7000TA,	MOSFET 基础
AN-7515	车用N沟道MOSFET, 车用P沟道MOSFET, MOSFET, FET, 功率管理, 2N7000, 2N7000BU, 2N7000TA,	AN-7515 单脉冲和重复UIS混合评估体系
AN-7533	MOSFET, FET, 2N7000, 2N7000BU, 2N7000TA, 2N7002,	A Revised MOSFET Model With Dynamic Temperature Compensation
AN-8039	MOSFET, 信号、感测和定时, FET, 与非门, Power Distribution Center & Body Load Control, 74VHC00, FDD8896_F085,	Using the FDDS100H06_F085 in Automotive Systems
AN-1029	所有驱动器, 汽车半桥驱动器, 车用产品, MOSFET, FET, FAN7080_GF085, FAN7081_GF085, FAN7083_GF085,	Maximum Power Enhancement Techniques for SO-8 Power MOSFETs
AN-1032	所有驱动器, 汽车半桥驱动器, 车用产品, FET, 高端驱动器, FAN7080_GF085, FAN7081_GF085, FAN7083_GF085,	Performance Restrictions Associated with 3.5 Watts SO-8 Power MOSFETs
AN-9068	MOSFET, FET, 功率管理, Telecom LLC, Telecom Phase-shift Full Bridge, FCA16N60N, FCA22N60N, FCA36N60NF,	SupreMOS®门极电阻设计指南
AN-9067	MOSFET, FET, 功率管理, SuperFET® II and SuperFET® II Easy-Drive MOSFETs, Telecom LLC, Telecom Phase-shift Full Bridge, FCA20N60F, FCA47N60F,	LLC 谐振变换器中MOSFET失效模式的分析
AN-5232	MOSFET, FET, SuperFET® II and SuperFET® II Easy-Drive MOSFETs, FCD380N60E, FCD600N60Z, FCD900N60Z,	高效率的新一代超结 MOSFET、SuperFET® II 和 SuperFET® II Easy Drive MOSFE（低开关噪音
AN-9066	MOSFET, FET, 功率因数校正, 整流器, TV & Monitor, FDA16N50_F109, FDA18N50, FDA20N50F,	UniFET™ Optimized Switch for Discontinuous Current Mode Power Factor Correction
AN-7514	MOSFET, FET, FDB8444	AN-7514 单脉冲非钳位电感性开关：额定系统
AN-9757	MOSFET, FET, FDB9403_F085	Determination of Maximum Current Rating for Low RDSON DPAK and D2PAK MOSFETs
AN-7536	MOSFET, FET, Central Inverter System, Micro Converter System, Micro Inverter System, Telecom LLC, Telecom Phase-shift Full Bridge, Welding Machine, FDH45N50F,	FCS Fast Body Diode MOSFET for Phase-Shifted ZVS PWM Full Bridge DC/DC Converter
AN-9055	MOSFET, FET, FDMA1023PZ, FDMA1024NZ, FDMA1025P, FDMA1027P,	Assembly Guidelines for MicroFET™ 2x2 Dual Packaging
AN-5233	MOSFET, FET, FDMA530PZ, FDMA8878, FDMA908PZ, FDMC510P,	Consideration of Power MOSFETs in Fast Charger Design
AN-7526	MOSFET, FET, FDMB2307NZ	Single Channel MicroFET™ 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance
AN-9056	MOSFET, FET, 离线与隔离 DC-DC, Central Inverter System, Micro Converter System, Micro Inverter System, Welding Machine, FDMC2512SDC,	Using Fairchild Semiconductor Dual Cool™ MOSFETs
AN-4158	MOSFET, FET, FDMS8090	Symmetric Dual N-Channel Shielded Gate PowerTrench® MOSFETs for Half-Bridge DC-DC Converter in Telecommunication Brick Module Application
AN-7534	MOSFET, FET, FDP038AN06A0	A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs
AN-7532	MOSFET, FET, FDP038AN06A0	A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs
AN-7004	MOSFET, FET, FDS2670	Power Converter Topology and MOSFET Selection for 48-V Telecom Applications
AN-7517	MOSFET, FET, Central Inverter System, Digital Power Generator, Micro Converter System, Micro Inverter System, Welding Machine, RFD16N05LSM,	Practical Aspects of Using PowerMOS Transistors to Drive Inductive Loads
AN-4161	MOSFET, FET, 功率管理, PowerTrench® MOSFETs	AN-4161 沟道 MOSFET 在线性工作模式下实现稳定性的实际考虑因素
AN-7506	FET	Spicing-Up Spice II Software For Power MOSFET Modeling
AN-9014	FET	Fairchild QFET® for Synchronous Rectification DC to DC Converters
AN-7016	FET	The Road to 200 Ampere VRM
AN-7017	FET, Central Inverter System, Digital Power Generator, Micro Converter System, Micro Inverter System, Welding Machine	Reducing Power Losses in MOSFETs by Controlling Gate Parameters
AN-7018	FET	Segmented Voltage Regulator Modules (VRM) as a Solution for CPU Core Voltage
AN-7503	FET	The Application Of Conductivity-Modulated Field-Effect Transistors
AN-7500	FET, TV & Monitor	Understanding Power MOSFETs
AN-7502	FET	Power MOSFET Switching Waveforms: A New Insight

Seminars

Board Level Evaluation of Power Quad Flat No-Lead (PQFN) Packages
Evaluations in surface mount board assembly are conducted for two advanced packages, the PQFN3x3 and PQFN5x6. (2008-2009)

Applying Power MOSFETs in an Unclamped Inductive Switching Environment (2006)
Online seminar explains Unclamped Inductive Switching (UIS) , why it's important to the designer, and understanding the UIS failure mechanism with a power MOSFET. (2006)

Understanding Modern Power MOSFETs
Driven by new energy efficiency regulations, system designers are increasingly adopting synchronous Buck controllers and half-bridge structures. This presents the designer with new challenge of designing with power MOSFETs. This presentation provides a basic understanding of MOSFETs with more detailed explanation of synchronous Buck and half-bridge structures. (2006)

Tips and Tricks to get More out of your SPICE Simulations
Circuit simulation tools are useful supplements to breadboarding for gaining fast and detailed design insight. This seminar provides a collection of tips and tricks used by the Fairchild GPRC team. (2007)

Using MOSFET Selection to Minimize Losses in Low-Output-Voltage DC-DC Converters
This paper highlights the role of the Power MOSFET in achieving high efficiency converter design. The MOSFET-to-circuit interaction is discussed in detail with the aid of TCAD mixed-mode simulations. (2008-2009)

Driving and Layout Requirements for Fast Switching MOSFETs
The objective of this paper is to describe the driving methods and layout requirements for fast switching MOSFETs. Power MOSFET technology continues to evolve towards higher cell density for lower on-resistance. However, there are silicon limits for a significant reduction in the on-resistance with the conventional planar MOSFET technology due to the exponential increase in onresistance with increasing breakdown voltage. One approach to overcome this limitation is to use Super-Junction technology in high voltage power MOSFETs. This technology dramatically reduces both on-resistance and parasitic capacitances. With smaller parasitic capacitances, these Super-Junction MOSFETs have extremely fast switching characteristics and as a result, reduced switching losses. This switching behavior occurs with greater dv/dt and di/dt that affects switching performance through parasitic components in the devices and on the printed circuit board and influences the EMI performance of the entire system.

产品中心

\new center

联系我们

FETs

FET Portfolio

Why Choose Our MOSFET Products

应用指南 #talbes td{border-right:1px solid #2c2c2c; border-bottom:1px solid #2c2c2c;}

Seminars

应用指南