| 型号 | 封装 | 极性 | 制程工艺 |
VDss ( V ) |
RDS(on) (VGS=10V) [mΩ] |
ID(DC) (A) |
PT(Tc=25℃) (W) |
Rth(ch-C) (℃/W) |
QG typ. (nC) |
Ciss typ. (pF) |
|
NP8ONO4KHE
|
T0-263 |
N-ch
|
UMOS2
|
40
|
8
|
80
|
120
|
1.25
|
40
|
2200
|
|
NP8ONO4MHE
|
T0-220 |
N-ch
|
UMOS2
|
40
|
8
|
80
|
120
|
1.25
|
40
|
2200
|
|
NP8ONO4NUG
|
T0-262 |
N-ch
|
UMOS4
|
40
|
4.8
|
80
|
115
|
1.3
|
90
|
4900
|
